BFS17L

SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 4 – MARCH 2001 PARTMARKING DETAILS — BFS17L - E1L BFS17H - E1H BFS17L BFS17H C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 25 15 2.5 50 25 330 -55 to +150 UNIT V V V mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector Cut-Off Current Static Forward Current Transfer Ratio BFS17L BFS17H SYMBOL I CBO MIN. TYP. MAX. 10 10 UNIT nA µA CONDITIONS. V CB=10V, I E=0 V CB=10V, I E=0, T amb = 100°C h FE 25 70 20 100 200 125 1.0 1.3 GHz GHz pF 1.5 2.0 4.5 -45 pF pF dB dB I C=2.0mA, V CE=1.0V I C=2.0mA, V CE=1.0V I C=25mA, V CE=1.0V I C=2.0mA, V CE=5.0V f=500MHz I C=25mA, V CE=5.0V f=500MHz IC=2.0mA, VCE=5V, f=1MHz VCB=10V, f=1MHz VEB=0.5V, f=1MHz I C=2.0mA, V CE=5.0V R S=50 Ω , f=500MHz I C=10mA, V CE=6.0V R L =37.5 Ω ,T amb=25°C Vo=100mV at fp=183MHz Vo=100mV at fq=200MHz measured at f(2q-p) =217MHz Transition Frequency fT Feedback Capacitance Output Capacitance Input Capacitance Noise Figure Intermodulation Distortion -C re C obo C ibo N d im 0.85 Spice parameter data is available upon request for this device TBA BFS17L BFS17H TYPICAL CHARACTERISTICS 80 f=400MHz 2 VCE=10V 1 VCE=5V hFE - Normalised Gain 3 f T - (GHz) 60 VCE=10V 40 20 0 0.1 1 10 100 1000 1...