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BFS17A Dataheets PDF



Part Number BFS17A
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Datasheet BFS17A DatasheetBFS17A Datasheet (PDF)

BFS17A/BFS17AR/BFS17AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain D Small collector capacitance 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFS17A Marking: E2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFS17AR Marki.

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BFS17A/BFS17AR/BFS17AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain D Small collector capacitance 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFS17A Marking: E2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFS17AR Marking: E5 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 13 570 2 3 BFS17AW Marking: WE2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Document Number 85039 Rev. 4, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (10) BFS17A/BFS17AR/BFS17AW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 200 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Test Conditions Collector cut-off current VCE = 25 V, VBE = 0 Collector-base cut-off current VCB = 10 V, IE = 0 Emitter-base cut-off current VEB = 2.5 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA DC forward current transfer ratio VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 15 V VCEsat 0.1 0.6 V hFE 20 50 150 hFE 20 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, IC = 14 mA, f = 300 MHz VCE = 5 V, IC = 30 mA, f = 300 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W, f = 800 MHz Power gain VCE = 10 V, IC = 14 mA, ZS = 50 W, f = 800 MHz Linear output voltage – two VCE = 10 V, IC = 14 mA, dIM = 60 dB, tone intermodulation test f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz www.vishay.de • FaxBack +1-408-970-5600 2 (10) Symbol fT fT fT Ccb Cce Ceb F Gpe V1 = V2 IP3 Min 3 Typ 1.5 3.5 3.2 0.6 0.1 1.1 2.5 13 150 Max Unit GHz GHz GHz pF pF pF dB dB mV 23.5 dBm Document Number 85039 Rev. 4, 20-Jan-99 BFS17A/BFS17AR/BFS17AW Vishay Telefunken Common Emitter S–Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA f/MHz 100 300 500.


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