BFR949T
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to...
BFR949T
NPN Silicon RF
Transistor
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
f T = 9 GHz
F = 1.0 dB at 1 GHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949T
Maximum Ratings Parameter
Marking RKs 1=B
Pin Configuration 2=E 3=C
Package SC75
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 10 20 20 1.5 70 7 250 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75°C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 2) RthJS
300
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Oct-24-2001
BFR949T
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Base-emitter forward voltage IE = 25mA Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 µA ICBO 100 nA VBEF 1.05 V(BR)CEO 10 V Symbol min. Values typ. max. Unit
2
Oct-24-2001
BFR949T
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verifi...
