Low Noise Silicon Bipolar RF Transistor
• For low distortion amplifiers and oscillators up to 2 GHz at collector current...
Low Noise Silicon Bipolar RF
Transistor
For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA
Pb-free (RoHS compliant) and halogen-free package with visible leads
Qualification report according to AEC-Q101 available
BFR93AW
32 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR93AW
Marking
Pin Configuration
R2s 1=B 2=E 3=C
Package SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 108 °C Junction temperature Ambient temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TA
12 20 20 2 90 9 300
150 -65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
140
1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2014-04-04
BFR93AW
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = ...
