BFR93AW

DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR93AW FEATURES  High power gain  Gold metallization ensures excellent reliability  SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, 2 columns 3 12 Top view MBC870 Marking code: R2. Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE Cre fT GUM F Tj collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure junction temperature open emitter open base up to Ts = 93 C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt Note 1. Ts is the temperature at the soldering point of the collector pin. MIN.     40  TYP.     90 0.6 MAX. 15 12 35 300   UNIT V V mA mW pF 4 5  GHz  13 ...