BFR520T

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT416 (SC75) envelope. DESCRIPTION NPN transistor in a plastic SOT416 (SC75) envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. handbook, halfpage BFR520T PINNING PIN 1 2 3 base emitter collector DESCRIPTION Code: N2 3 1 2 MAM337 Fig.1 SOT416. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 °C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 °C IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. − − − − 60 − − − TYP. − − − − 120 9 15 1.1 MAX. 20 15 70 300 250 − − 1.6 GHz dB dB UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage co...