BFR380T

BFR380T NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380T Maximum Ratings Parameter Marking FCs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Package SC75 Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS
66°C 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value V mA mW °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2)
220 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jul-01-2003 BFR380T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V hFE 60 130 200 IEBO 1 µA ICBO 100 nA ICES 10 µA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jul-01-20...