BFR31LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BFR30LT1/D JFET Amplifiers N–Channel 2 SOURCE 3 GATE BFR30LT1 BFR31LT1 3 1 1 DRAIN 2 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) MAXIMUM RATINGS Rating Drain – Source Voltage Gate – Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage (VGS = 10 Vdc, VDS = 0) (ID = 0.5 nAdc, VDS = 10 Vdc) (ID = 1.0 mAdc, VDS = 10 Vdc) (ID = 50 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 IGSS VGS(OFF) VGS — — — – 0.7 — — — 0.2 5.0 2.5 – 3.0 – 1.3 – 4.0 – 2.0 nAdc Vdc Vdc 1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a registered trademark of the Berquist Company. Motorola Transistors, FETs and Diodes Device Data © Motorola, Small–Signal Inc. 1996 1 BFR30LT1 BFR31LT1 ELECTRICAL CHARACTER...