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BFR181T

Infineon Technologies AG

NPN Silicon RF Transistor


Description
BFR181T NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR181T Maximum Ratings Parameter Marking RFs 1=B Pin Configuration 2=E 3=C S...



Infineon Technologies AG

BFR181T

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