DatasheetsPDF.com

BS616LV8011

Part Number	BS616LV8011
Manufacturer	Brilliance Semiconductor
Description	Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Published	Mar 23, 2005
Detailed Description	BSI FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit DESCRIPTION BS616LV8011 • Very low operation voltage ...
Datasheet	BS616LV8011 PDF File

Overview

BSI FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit DESCRIPTION BS616LV8011 • Very low operation voltage : 2.
7 ~ 3.
6V • Very low power consumption : Vcc = 3.
0V C-grade: 40mA (Max.
) operating current I-grade : 50mA (Max.
) operating current 1uA (Typ.
) CMOS standby current • High speed access time : -70 70ns (Max.
) at Vcc=3.
0V -10 100ns (Max.
) at Vcc=3.
0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
5V • Easy expansion with CE1,CE2 and OE options The BS616LV8011 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits...

Similar Datasheet

BS616LV8010 Very Low Power/Voltage CMOS SRAM 512K X 16 bit - Brilliance Semiconductor
BS616LV8011 Very Low Power/Voltage CMOS SRAM 512K X 16 bit - Brilliance Semiconductor
BS616LV8012 Very Low Power/Voltage CMOS SRAM 512K X 16 bit - Brilliance Semiconductor
BS616LV8013 Very Low Power/Voltage CMOS SRAM 512K X 16 bit - Brilliance Semiconductor
BS616LV8015 Very Low Power/Voltage CMOS SRAM 512K X 16 bit - Brilliance Semiconductor
BS616LV8021 Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable - Brilliance Semiconductor
BS616LV8022 Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable - Brilliance Semiconductor
BS616LV8023 Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable - Brilliance Semiconductor
BS616LV8025 Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable - Brilliance Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)