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BRY56A Dataheets PDF



Part Number BRY56A
Manufacturers NXP
Logo NXP
Description Programmable unijunction transistor
Datasheet BRY56A DatasheetBRY56A Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BRY56A Programmable unijunction transistor Product specification 1999 May 31 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION Planar PNPN trigger device in a TO-92; SOT54 plastic package. APPLICATIONS • Switching applications such as: – Motor control – Oscillators – Relay replacement – Timers – Pulse shapers, etc. MSB033 handbook, halfpage BRY56A PINNING PIN 1 2 3 gate anode cathode DESCRIP.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BRY56A Programmable unijunction transistor Product specification 1999 May 31 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION Planar PNPN trigger device in a TO-92; SOT54 plastic package. APPLICATIONS • Switching applications such as: – Motor control – Oscillators – Relay replacement – Timers – Pulse shapers, etc. MSB033 handbook, halfpage BRY56A PINNING PIN 1 2 3 gate anode cathode DESCRIPTION anode a g gate book, halfpage 1 2 3 k cathode MGL167 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VGA IA(AV) IARM IASM dlA/dt Ptot Tstg Tj Tamb PARAMETER gate-anode voltage average anode current repetitive peak anode current rate of rise of anode current total power dissipation storage temperature junction temperature operating ambient temperature tp = 10 µs; δ = 0.01 IA ≤ 2.5 A Tamb ≤ 75 °C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN. MAX. 70 175 2.5 3 20 300 +150 150 +150 V mA A A A/µs mW °C °C °C UNIT 1999 May 31 2 Philips Semiconductors Product specification Programmable unijunction transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 250 BRY56A UNIT K/W thermal resistance from junction to ambient in free air CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL IP IV Voffset IGAO IGKS VAK VOM tr PARAMETER peak point current valley point current offset voltage gate-anode leakage current anode-cathode voltage peak output voltage rise time CONDITIONS VS = 10 V; RG = 10 kΩ; see Fig.7 VS = 10 V; RG = 100 kΩ; see Fig.7 VS = 10 V; RG = 10 kΩ; see Fig.7 VS = 10 V; RG = 100 kΩ; see Fig.7 typical curve; IA = 0; see Fig.7 IK = 0; VGA = 70 V; see Fig.5 IA = 100 mA VAA = 20 V; C = 10 nF; see Figs 8 and 9 VAA = 20 V; C = 10 nF; see Fig.9 − − 2 1 − − − − 6 − MIN. − − − − − − − − − TYP. MAX. 200 60 − − 10 100 1.4 − 80 UNIT nA nA µA µA V nA nA V V ns VP − VS − gate-cathode leakage current VAK = 0; VKG = 70 V; see Fig.6 handbook, full pagewidth +40 V BZY88C8V2 5 kΩ 100 µF BY206 (2x) R1 750 Ω 40 K A 1 nF D.U.T 10 kΩ 20 Ω osc. RG VS MBK189 IP and IV determined by value of R1. 1 R1 = ---- ; i.e. maximum voltage drop over R1 = 1 V. IA Internal resistance of oscilloscope = 10 MΩ. Fig.2 Measuring circuit for peak and valley point currents. 1999 May 31 3 Philips Semiconductors Product specification Programmable unijunction transistor BRY56A handbook, halfpage +VB handbook, halfpage IA RG = VAK VS = R1 R2 R1 R2 VB R2 DUT R1 DUT R1 R1 R2 MBB699 MEA141 Fig.4 Fig.3 BRY56A with ‘program’ resistors R1 and R2. Equivalent test circuit for characteristics testing. handbook, halfpage DUT I GAO handbook, halfpage I GKS DUT VGA VGK MBB697 MBB696 Fig.5 Equivalent test circuit for gate-anode leakage current. Fig.6 Equivalent test circuit for gate-cathode leakage cur.


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