Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BRY56A Programmable unijunction transistor
Product specification 1999 May 31
Philips Semiconductors
Product specification
Programmable unijunction transistor
DESCRIPTION Planar PNPN trigger device in a TO-92; SOT54 plastic package. APPLICATIONS • Switching applications such as: – Motor control – Oscillators – Relay replacement – Timers – Pulse shapers, etc.
MSB033
handbook, halfpage
BRY56A
PINNING PIN 1 2 3 gate anode cathode DESCRIPTION
anode a g gate
book, halfpage
1
2 3
k cathode
MGL167
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VGA IA(AV) IARM IASM dlA/dt Ptot Tstg Tj Tamb PARAMETER gate-anode voltage average anode current repetitive peak anode current rate of rise of anode current total power dissipation storage temperature junction temperature operating ambient temperature tp = 10 µs; δ = 0.01 IA ≤ 2.5 A Tamb ≤ 75 °C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN. MAX. 70 175 2.5 3 20 300 +150 150 +150 V mA A A A/µs mW °C °C °C UNIT
1999 May 31
2
Philips Semiconductors
Product specification
Programmable unijunction transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 250
BRY56A
UNIT K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL IP IV Voffset IGAO IGKS VAK VOM tr PARAMETER peak point current valley point current offset voltage gate-anode leakage current anode-cathode voltage peak output voltage rise time CONDITIONS VS = 10 V; RG = 10 kΩ; see Fig.7 VS = 10 V; RG = 100 kΩ; see Fig.7 VS = 10 V; RG = 10 kΩ; see Fig.7 VS = 10 V; RG = 100 kΩ; see Fig.7 typical curve; IA = 0; see Fig.7 IK = 0; VGA = 70 V; see Fig.5 IA = 100 mA VAA = 20 V; C = 10 nF; see Figs 8 and 9 VAA = 20 V; C = 10 nF; see Fig.9 − − 2 1 − − − − 6 − MIN. − − − − − − − − − TYP. MAX. 200 60 − − 10 100 1.4 − 80 UNIT nA nA µA µA V nA nA V V ns
VP − VS −
gate-cathode leakage current VAK = 0; VKG = 70 V; see Fig.6
handbook, full pagewidth
+40 V BZY88C8V2
5 kΩ
100 µF BY206 (2x)
R1 750 Ω 40 K
A
1 nF D.U.T 10 kΩ 20 Ω osc.
RG
VS
MBK189
IP and IV determined by value of R1. 1 R1 = ---- ; i.e. maximum voltage drop over R1 = 1 V. IA Internal resistance of oscilloscope = 10 MΩ.
Fig.2 Measuring circuit for peak and valley point currents.
1999 May 31
3
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
handbook, halfpage
+VB
handbook, halfpage
IA RG = VAK VS = R1 R2 R1 R2 VB
R2 DUT R1
DUT
R1 R1 R2
MBB699 MEA141
Fig.4 Fig.3 BRY56A with ‘program’ resistors R1 and R2.
Equivalent test circuit for characteristics testing.
handbook, halfpage
DUT I GAO
handbook, halfpage
I GKS DUT
VGA
VGK
MBB697
MBB696
Fig.5
Equivalent test circuit for gate-anode leakage current.
Fig.6
Equivalent test circuit for gate-cathode leakage cur.