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SS32, SS33, SS34, SS35, SS36
Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
SMC (DO-214AB)
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
Design Tools
Related Documents
3D 3D
3D Models
Models
A
Application Notes
Marking
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS
3.0 A 20 V, 30 V, 40 V, 50 V, 60 V
100 A 20 mJ
VF TJ max. Package
0.5 V, 0.75 V 150 °C
SMC (DO-214AB)
Circuit configuration
Single
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
Available
• AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
MECHANICAL DATA
Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SS32
Device marking code
S2
Maximum repetitive peak reverse voltage
VRRM
20
Maximum RMS voltage
VRMS
14
Maximum DC blocking voltage
VDC
20
Maximum average forward rectified current at TL (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
Non-repetitive avalanche energy at TA = 25 °C, IAS = 2.0 A, L = 10 mH Voltage rate of change (rated VR) Operating junction temperature range
Storage temperature range
EAS
dV/dt TJ
TSTG
SS33 S3 30 21 30
SS34 S4 40 28 40 3.0
100
SS35 S5 50 35 50
20
10 000 -55 to +150 -55 to +150
SS36 S6 60 42 60
UNIT
V V V A A
mJ V/μs °C °C
Revision: 23-Apr-2020
1
Document Number: 88751
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SS32, SS33, SS34, SS35, SS36
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL SS32
SS33
Maximum instantaneous forward voltage (1)
3.0 A
VF
0.5
Maximum DC reverse current at rated DC blocking voltage (1)
TA = 25 °C TA = 100 °C
IR
20
Note (1.