Document
Memory ICs
2,048-Bit Serial Electrically Erasable PROM
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
Features • • Low power CMOS technology • 128 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V • Auto increment for efficient data bump • Automatic erase-before-write • Hardware and software write protection – Default to write-disabled state at power up – Software instructions for write-enable / disable – Vcc lock out inadvertent write protection • 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages • Device status signal during write cycle • TTL compatible Input / Output • 100,000 ERASE / write cycles • 10 years Data Retention
•Pin assignments
CS 1 SK 2 DI 3 8 VCC 7 N.C. N.C. 1 VCC 2 CS SK 3 4 8 7 6 5 N.C. GND DO DI
BR93LC56 / BR93LC56RF
6 N.C. 5 GND
BR93LC56F / BR93LC56FV
DO 4
•Pin descriptions
Pin name CS SK DI DO GND N.C. N.C. VCC Chip select input Serial clock input Start bit, operating code, address, and serial data input Serial data output, READY / BUSY internal status display output Ground Not connected Not connected Power supply Function
Overview • The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 128 words × 16 bits (2,048 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin. The only difference between the BR93LC56 / F / RF / FV is the write disable voltage and its accompanying write enable voltage. All other functions and characteristics are the same.
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Memory ICs
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
•Block diagram
Power supply
CS
Command decode Control Clock generation Write
voltage detector
High voltage generator
SK
disable
Address Command 7bit buffer
Address decoder 7bit 2,048-bit
DI
register Data 16bit register amplifier R/W 16bit EEPROM array
DO
Dummy bit
•Absolute maximum ratings (Ta = 25°C)
Parameter Applied voltage BR93LC56 Power BR93LC56F / RF dissipation BR93LC56FV Storage temperature Operating temperature Terminal voltage Symbol VCC Limits – 0.3 ~ + 6.5 500 Pd
∗1
Unit V
350∗2 300∗3
mW °C °C V
Tstg Topr —
– 65 ~ + 125 – 40 ~ + 85 – 0.3 ~ VCC + 0.3
∗1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C. ∗2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C. ∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
•Recommended operating conditions (Ta = 25°C)
Parameter Power supply voltage Input voltage Writing Reading VIN Symbol VCC Min. 2.7 2.0 0 Typ. — — — Max. 5.5 5.5 VCC Unit V V V
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Memory ICs
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
CC
•Electrical characteristics (unless otherwise noted, Ta = – 40 to + 85°C, V
Parameter Input low level voltage Input high level voltage Output low level voltage 1 Output high level voltage 1 Output low level voltage 2 Output high level voltage 2 Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current ICC2 ISB — — 0.7 1.0 1.5 5 mA µA Symbol VIL VIH VOL1 VOH1 VOL2 VOH2 ILI ILO ICC1 Min. – 0.3 2.0 — 2.4 — VCC – 0.4 – 1.0 – 1.0 — Typ. — — — — — — — — 1.5 Max. 0.8 VCC + 0.3 0.4 — 0.2 — 1.0 1.0 3 Unit V V V V V V µA µA mA
= 5V ± 10%)
Conditions — —
IOL = 2.1mA IOH = – 0.4mA IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = GND VIN = VIH / VIL, DO = OPEN f = 1MHz, WRITE VIN = VIH / VIL, DO = OPEN f = 1MHz, READ CS = SK = DI = GND, DO = OPEN
(unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current ISB — 0.4 3 µA ICC2 — 0.2 1 mA Symbol VIL VIH VOL VOH ILI ILO ICC1 Min. – 0.3 0.7 × VCC — VCC – 0.4 – 1.0 – 1.0 — Typ. — — — — — — 0.5 Max. 0.15 × VCC VCC + 0.3 0.2 — 1.0 1.0 2 Unit V V V V µA µA mA IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = GND VIN = VIH / VIL, DO = OPEN, f = 250kHz, WRITE VIN = VIH / VIL, DO = OPEN, f = 250kHz, READ CS = SK = DI = GND, DO = OPEN
CC
Conditions — —
•Electrical characteristics (unless otherwise noted, Ta = – 40 to + 85°C, V
Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 2 Standby current ICC2 ISB — — 0.2 0.4 1 3 mA µA Symbol VIL VIH VOL VOH ILI ILO Min. – 0.3 0.7 × VCC — VCC – 0.4 – 1.0 – 1.0 Typ. — — — — — — Max. 0.15 × VCC VCC + 0.3 0.2 — 1.0 1.0 Unit V V V V µA µA
= 2.0V ± 10%)
Conditions — —
IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT.