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BR93LC56F Dataheets PDF



Part Number BR93LC56F
Manufacturers Rohm
Logo Rohm
Description 2/048-Bit Serial Electrically Erasable PROM
Datasheet BR93LC56F DatasheetBR93LC56F Datasheet (PDF)

Memory ICs 2,048-Bit Serial Electrically Erasable PROM BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV Features • • Low power CMOS technology • 128 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V • Auto increment for efficient data bump • Automatic erase-before-write • Hardware and software write protection – Default to write-disabled state at power up – Software instructions for write-enable / disable – Vcc.

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Memory ICs 2,048-Bit Serial Electrically Erasable PROM BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV Features • • Low power CMOS technology • 128 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V • Auto increment for efficient data bump • Automatic erase-before-write • Hardware and software write protection – Default to write-disabled state at power up – Software instructions for write-enable / disable – Vcc lock out inadvertent write protection • 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages • Device status signal during write cycle • TTL compatible Input / Output • 100,000 ERASE / write cycles • 10 years Data Retention •Pin assignments CS 1 SK 2 DI 3 8 VCC 7 N.C. N.C. 1 VCC 2 CS SK 3 4 8 7 6 5 N.C. GND DO DI BR93LC56 / BR93LC56RF 6 N.C. 5 GND BR93LC56F / BR93LC56FV DO 4 •Pin descriptions Pin name CS SK DI DO GND N.C. N.C. VCC Chip select input Serial clock input Start bit, operating code, address, and serial data input Serial data output, READY / BUSY internal status display output Ground Not connected Not connected Power supply Function Overview • The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 128 words × 16 bits (2,048 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin. The only difference between the BR93LC56 / F / RF / FV is the write disable voltage and its accompanying write enable voltage. All other functions and characteristics are the same. 1 Memory ICs BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV •Block diagram Power supply CS Command decode Control Clock generation Write voltage detector High voltage generator SK disable Address Command 7bit buffer Address decoder 7bit 2,048-bit DI register Data 16bit register amplifier R/W 16bit EEPROM array DO Dummy bit •Absolute maximum ratings (Ta = 25°C) Parameter Applied voltage BR93LC56 Power BR93LC56F / RF dissipation BR93LC56FV Storage temperature Operating temperature Terminal voltage Symbol VCC Limits – 0.3 ~ + 6.5 500 Pd ∗1 Unit V 350∗2 300∗3 mW °C °C V Tstg Topr — – 65 ~ + 125 – 40 ~ + 85 – 0.3 ~ VCC + 0.3 ∗1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C. ∗2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C. ∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C. •Recommended operating conditions (Ta = 25°C) Parameter Power supply voltage Input voltage Writing Reading VIN Symbol VCC Min. 2.7 2.0 0 Typ. — — — Max. 5.5 5.5 VCC Unit V V V 2 Memory ICs BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV CC •Electrical characteristics (unless otherwise noted, Ta = – 40 to + 85°C, V Parameter Input low level voltage Input high level voltage Output low level voltage 1 Output high level voltage 1 Output low level voltage 2 Output high level voltage 2 Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current ICC2 ISB — — 0.7 1.0 1.5 5 mA µA Symbol VIL VIH VOL1 VOH1 VOL2 VOH2 ILI ILO ICC1 Min. – 0.3 2.0 — 2.4 — VCC – 0.4 – 1.0 – 1.0 — Typ. — — — — — — — — 1.5 Max. 0.8 VCC + 0.3 0.4 — 0.2 — 1.0 1.0 3 Unit V V V V V V µA µA mA = 5V ± 10%) Conditions — — IOL = 2.1mA IOH = – 0.4mA IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = GND VIN = VIH / VIL, DO = OPEN f = 1MHz, WRITE VIN = VIH / VIL, DO = OPEN f = 1MHz, READ CS = SK = DI = GND, DO = OPEN (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%) Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current ISB — 0.4 3 µA ICC2 — 0.2 1 mA Symbol VIL VIH VOL VOH ILI ILO ICC1 Min. – 0.3 0.7 × VCC — VCC – 0.4 – 1.0 – 1.0 — Typ. — — — — — — 0.5 Max. 0.15 × VCC VCC + 0.3 0.2 — 1.0 1.0 2 Unit V V V V µA µA mA IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = GND VIN = VIH / VIL, DO = OPEN, f = 250kHz, WRITE VIN = VIH / VIL, DO = OPEN, f = 250kHz, READ CS = SK = DI = GND, DO = OPEN CC Conditions — — •Electrical characteristics (unless otherwise noted, Ta = – 40 to + 85°C, V Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 2 Standby current ICC2 ISB — — 0.2 0.4 1 3 mA µA Symbol VIL VIH VOL VOH ILI ILO Min. – 0.3 0.7 × VCC — VCC – 0.4 – 1.0 – 1.0 Typ. — — — — — — Max. 0.15 × VCC VCC + 0.3 0.2 — 1.0 1.0 Unit V V V V µA µA = 2.0V ± 10%) Conditions — — IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT.


BR93LC56 BR93LC56F BR93LC56FV


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