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BR806

EIC discrete Semiconductors

SILICON BRIDGE RECTIFIERS

BR800 - BR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * * * * * * High current capability High surge current c...


EIC discrete Semiconductors

BR806

File Download Download BR806 Datasheet


Description
BR800 - BR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS BR10 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) AC 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) 0.75 (19.1) Min. 0.30 (7.62) 0.25 (6.35) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at I F = 4.0 Amp. Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL BR80...




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