BRG10N120D
Rev.D Oct.-2015
DATA SHEET
/ Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Pack...
BRG10N120D
Rev.D Oct.-2015
DATA SHEET
/ Descriptions TO-3P 。Insulated-Gate Bipolar
Transistor in a TO-3P Plastic Package.
/ Features
，，，。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage.
/ Applications
。 Eddy-current heating.
/ Equivalent Circuit
/ Pinning
1 2 3
PIN1：Gate
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking 。See Marking Instructions.
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BRG10N120D
Rev.D Oct.-2015
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Collector-emitter voltage
Gate-emitter voltage
Collector current@TC=25℃
Collector current@TC=100℃ Collector peak current, TP limited by TJMAX Diode forward current
Diode forward c...
