Si7129DN

www.vishay.com Si7129DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) e, f Configuration 1 2S 3S 4S G Bottom View -30 0.0114 0.0200 24.6 -35 Single FEATURES TrenchFET® power MOSFET Low thermal resistance PowerPAK® package with small size and low 1.07 mm profile 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load switch Adaptor switch Notebook PC S G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 Si7129DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Continuous source-drain diode current VDS -30 V VGS ± 20 TC = 25 °C -35 e TC = 70 °C TA = 25 °C ID -35 e -14.4 a, b TA = 70 °C -11.5 a, b A IDM -60 TC = 25 °C TA = 25 °C IS -35 e -3.2 a, b Avalanche current Single pulse avalanche energy L = 0.1 mH IAS -25 EAS 31.25 mJ TC = 25 °C 52.1 Maximum power dissipation TC = 70 °C TA = 25 °C PD 3.3 3.8 a, b W TA = 70 °C 2.4 a, b Operating junction and storage temperature range Soldering recommendations (peak temperature) c, d TJ, Tstg -50 to +150 °C 260 Notes a. Surface mount...