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TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
BR2500 - BR2510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts Io : 25 Amperes
BR50
0.728(18.50) 0.688(17.40)
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2400 VAC @1 Sec * Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams
0.570(14.50) 0.530(13.40)
0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40)
0.658(16.70) 0.618(15.70)
0.210(5.30) 0.200(5.10)
0.032(0.81) 0.028(0.71)
0.310(7.87) 0.280(7.11)
0.252(6.40) 0.248(6.30)
φ0.100(2.50) 0.090(2.30)
0.905(23.0) 0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 12.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL BR2500 BR2501 BR2502 BR2504 BR2506 BR2508 BR2510 UNIT
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
IF(AV)
25
A
IFSM 300 A
I2t VF IR IR(H)
RθJC
TJ TSTG
375 1.1 10 200 1.45 - 40 to + 150 - 40 to + 150
A2S V μA μA
°C/W °C °C
Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
Page 1 of 2
Rev. 03 : March 27, 2013
www.eicsemi.com
TH97/2478
TH09/2479
RATING AND CHARACTERISTIC CURVES ( BR2500 - BR2510 )
IATF 0113686 SGS TH07/1033
AVERAGE FORWARD OUTPUT CURRENT, AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
30
25
20
15
10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK.
5 (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate
0 0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
300
250 200 TJ = 50 °C
150
100
50
8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
0 12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
1.0
TJ = 25 °C
0.1 Pulse Width = 300 μs 1 % Duty Cycle
0.01 0.4
0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE, VOLTS
1.8
REVERSE CURRENT, MICROAMPERES
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10 TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01 0
20 40 60 80 100 120
PERCENT OF RATED REVERSE VOLTAGE, (%)
140
FORWARD CURRENT, AMPERES
Page 2 of 2
Rev. 03 : March 27, 2013
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