D2549

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 80 80 6 5 3 20 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICES ICE...