Document
Sa mHop Microelectronics C orp.
MOS Controlled Diode
SMD15V45SPGreen
Product
Ver 1.0
PRODUCT SUMMARY VRRM IO VF(MAX) @ 25°C IR(MAX) @ 25°C
45V 15A
0.53V
0.5mA
FEATURES Low Profile Design for Smart Phone Charger Ideal for SMT Mounting Low forward voltage drop High forward surge capability Excellent High Temperature Stability
TO-277
Top View
Bottom View
ANODE PINS
BOTTOMSIDE HEAT SINK
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM VRM
Working Peak Reverse Voltage DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage
IO Average Rectified Output Current
I FSM
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
EAS
Non-Repetitive Avalanche Energy (TJ= 25°C,IAS = 11,L = 5mH)
PARM
Repetitive Peak Avalanche Energy
Value 45 45 45 32 15
150
210
26000
Unit V V V V A
A
mJ
W
THERMAL CHARACTERISTICS
Symbol R JA TJ T STG
Parameter Thermal Resistance, Junction-.