Document
SC8270SGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Preliminary
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
10.2 @ VGS=4.5V
10.5 @ VGS=4.0V
24V 9A 11.5 @ VGS=3.8V
12.0 @ VGS=3.1V
14.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected.
WLCSP
TOP VIEW
1.61 0.03
BOTTOM VIEW
0.65
LAND PATTERN (REFERENCE)
0.65
2.55 0.03
8270S
Date Code
S1 S2 G1 G2 S1 S2
0.65 0.65
0.65 0.65
1-pin index mark S1 0.11 0.01
S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2
6 - φ 0.31
φ 0.31
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
24
VGSS IS ISP
Gate-Source Voltage Source Current-Continuous a
-Pulsed b
±12 9 90
PT Total Power Dissipation a
1.3
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
Units V V A A W
°C
FET1 Gate 1
FET2 Gate 2
Gate Protect Diode
Source 1
.