M58WR032KT

M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Features M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank Burst, Flash M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB Features Supply voltage – VDD = 1.7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.7V to 2V for I/O buffers – VPP = 9V for fast program SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS BURST READ mode: 66 MHz – Asynchronous/synchronous page READ mode – Random access times: 70ns SYCHRONOUS BURST READ SUSPEND Programming time – 10µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options Memory blocks – Multiple bank memory array: 4Mb banks – Parameter blocks (top or bottom location) Dual operations – PROGRAM ERASE in one bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked – WP# for block lock-dow...