M58BW32F

M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory Features Supply voltage – VDD = 2.7–3.6V (45ns) or VDD = 2.5–3.3V (55ns) – VDDQ = VDDQIN = 2.4V to VDD for I/O buffers High performance – Access times: 45ns and 55ns – Synchronous burst reads – 75 MHz effective zero wait-state burst read – Asynchronous page reads (4 double words) M58BW32F memory organization: – Eight 64 Kbit small parameter blocks – Four 128 Kbit large parameter blocks – Sixty-two 512 Kbit main blocks M58BW16F memory organization: – Eight 64 Kbit parameter blocks – Thirty-one 512 Kbit main blocks Hardware block protection – WP# pin to protect any block combination from PROGRAM and ERASE operations – PEN signal for program/erase enable Irreversible modify protection (OTP like) on 128 Kbits: – Block 1 (bottom device) or block 72 (top device) in the M58BW32F – Blocks 2 and 3 (bottom device) or blocks 36 an...