Parallel NOR Flash Embedded Memory
512Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W512GH70N3E, M29W512GH7AN6E
Featur...
Description
512Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W512GH70N3E, M29W512GH7AN6E
Features
Stacked device (two 256Mb die) Supply voltage
– VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 80ns, 90ns Commands sensitive to MSB A24 (die selection) Fast program commands: 32-word (64-byte) write buffer Enhanced buffered program commands: 256-word Program time – 16µs per byte/word TYP – Single die program time: 10s with VPPH, 16s with-
out VPPH Memory organization
– Uniform blocks: 512 main blocks (2 x 256), 128KB or 64KW each
Program/erase controller – Embedded byte/word program algorithms
Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation – Read or program another block durin...
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