BAV99W

Switching Diodes Silicon Epitaxial Planar BAV99W 1. Applications High-Speed Switching 2. Packaging and Internal Circuit BAV99W 1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2 USM 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 100 V Reverse voltage VR 100 Peak forward current IFM (Note 1) 500 mA Average rectified current IO (Note 2) 150 Non-repetitive peak forward surge current IFSM (Note 2), (Note 3) 2 A Power dissipation PD 100 mW Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appr...