STB10N03Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
V...
STB10N03Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
120A
4.0 @ VGS=10V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
100 ±20
ID
Drain Current-Continuous b
TC=25°C TC=100°C
120 76
IDM -Pulsed b EAS Single Pulse Avalanche Energy c
480 300
TC=25°C PD Maximum Power Dissipation
TC=100°C
227 91
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
0.55 62.5
Units V V A A A mJ W W
°C
°C/W °C/W
Details are subject to change without notice.
1
Aug,31,2016
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