Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP4810
Ver 1.0
P...
Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
SP4810
Ver 1.0
PRODUCT SUMMARY (DIE 1)
VDSS
ID
RDS(ON) (mΩ) Max
40V 40A
15 @ VGS=10V 20 @ VGS=4.5V
PRODUCT SUMMARY (DIE 2)
VDSS
ID
RDS(ON) (mΩ) Max
40V 54A
10 @ VGS=10V 15 @ VGS=4.5V
G2 S2 S2 S2
S1/D2
PDFN 5x6
G1 D1 D1 D1
S2 5 S2 6 S2 7 G2 8
S1/D2
4 D1 3 D1 2 D1 1 G1
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous b
TC=25°C TC=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Die 1
Die 2
40
±20
40 54
32 43.2
89 94
81 121
42 62.5
27 40
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
32
Units V V A A A mJ W W °C
°C/W
Details are subject to change without notice.
1
Dec,19,2016
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