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BT300X-600R Dataheets PDF



Part Number BT300X-600R
Manufacturers NXP
Logo NXP
Description Thyristors
Datasheet BT300X-600R DatasheetBT300X-600R Datasheet (PDF)

Philips Semiconductors Product specification Thyristors BT300X series GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT300XRepetitive peak off-state voltag.

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Philips Semiconductors Product specification Thyristors BT300X series GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT300XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 65 600R 600 5 8 65 800R 800 5 8 65 V A A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION cathode anode gate PIN CONFIGURATION case SYMBOL a k case isolated 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Ths ≤ 79 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 65 71 21 50 2 5 5 5 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Thyristors BT300X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heat sink compound in free air MIN. TYP. 55 MAX. 5.7 9.3 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 12 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.25 TYP. 2 10 10 1.35 0.6 0.4 0.1 MAX. 15 40 20 1.6 1.5 0.5 UNIT mA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform. Gate open circuit RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 12 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω MIN. TYP. MAX. UNIT V/µs V/µs µs µs tgt tq 50 200 - 100 1000 2 70 - September 1997 2 Rev 1.100 Philips Semiconductors Product specification Thyristors BT300X series Ptot / W 8 conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 BT300X Tmb(max) / C a = 1.57 1.9 79 70 60 50 ITSM / A BT300 IT T ITSM time 6 2.2 90.5 Tj initial = 25 C max 2.8 4 102 40 30 20 4 2 113.5 10 0 0 1 2 3 IF(AV) / A 4 5 6 125 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). ITSM / A BT300 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 24 20 16 IT(RMS) / A BT150 dI T /dt limit 100 I TSM T time 12 IT 8 4 0 0.01 Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. IT(RMS) / A BT258 79 C 8 7 6 5 4 3 2 1 0 -50 0 50 Tmb / C 100 150 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 79˚C. VGT(Tj) VGT(25 C) 9 1.6 1.4 1.2 1 0.8 0.6 BT151 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Ths. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus j.


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