Document
Philips Semiconductors
Product specification
Thyristors
BT300X series
GENERAL DESCRIPTION
Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT300XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 65 600R 600 5 8 65 800R 800 5 8 65 V A A A
PINNING - SOT186A
PIN 1 2 3 DESCRIPTION cathode anode gate
PIN CONFIGURATION
case
SYMBOL
a
k
case isolated
1 2 3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Ths ≤ 79 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 65 71 21 50 2 5 5 5 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT300X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heat sink compound in free air MIN. TYP. 55 MAX. 5.7 9.3 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 12 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.25 TYP. 2 10 10 1.35 0.6 0.4 0.1 MAX. 15 40 20 1.6 1.5 0.5 UNIT mA mA mA V V V mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform. Gate open circuit RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 12 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω MIN. TYP. MAX. UNIT V/µs V/µs µs µs
tgt tq
50 200 -
100 1000 2 70
-
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
BT300X series
Ptot / W
8
conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57
BT300X
Tmb(max) / C a = 1.57 1.9
79
70 60 50
ITSM / A
BT300 IT T ITSM time
6
2.2
90.5
Tj initial = 25 C max
2.8 4
102
40 30 20
4
2
113.5
10
0
0
1
2
3 IF(AV) / A
4
5
6
125
0
1
10 100 Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
ITSM / A BT300
Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
1000
24 20 16
IT(RMS) / A
BT150
dI T /dt limit 100 I TSM T time
12
IT
8 4 0 0.01
Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A BT258 79 C 8 7 6 5 4 3 2 1 0 -50 0 50 Tmb / C 100 150
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 79˚C.
VGT(Tj) VGT(25 C)
9
1.6 1.4 1.2 1 0.8 0.6
BT151
0.4 -50
0
50 Tj / C
100
150
Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Ths.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus j.