DatasheetsPDF.com

BT258B-500R Dataheets PDF



Part Number BT258B-500R
Manufacturers NXP
Logo NXP
Description Thyristors logic level
Datasheet BT258B-500R DatasheetBT258B-500R Datasheet (PDF)

Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258B series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258BR.

  BT258B-500R   BT258B-500R


Document
Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258B series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258BRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION cathode anode gate anode PIN CONFIGURATION mb SYMBOL a 2 1 3 k g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board - BT258B series TYP. 55 MAX. 2.0 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 16 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.1 TYP. 50 0.4 0.3 1.3 0.4 0.2 0.1 MAX. 200 10 6 1.5 1.5 0.5 UNIT µA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ MIN. 50 TYP. 100 2 100 MAX. UNIT V/µs µs µs September 1997 2 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level BT258B series 8 7 6 5 4 3 2 1 0 Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 BT150 Tmb(max) / C a = 1.57 1.9 109 111 113 115 117 119 121 123 80 70 60 50 40 30 20 10 0 ITSM / A BT258 IT I TSM 2.2 2.8 4 time T Tj initial = 25 C max 0 1 2 3 IT(AV) / A 4 5 125 6 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). BT150 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 ITSM / A 24 20 16 12 IT(RMS) / A BT150 dI T/dt limit 100 I TSM T time IT 8 4 0 0.01 Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. IT(RMS) / A BT258 111 C Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 111˚C. VGT(Tj) VGT(25 C) 9 8 7 6 5 4 3 2 1 1.6 1.4 1.2 1 0.8 0.6 BT151 0 -50 0 50 Tmb / C 100 150 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. September 1997 3 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level BT258B series 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) BT150 30 25 IT / A Tj = 125 C Tj = 25 C Vo = 0.99 V Rs = 0.0325 ohms BT150+ 2.


BT258B BT258B-500R BT258B-600R


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)