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Philips Semiconductors
Product specification
Thyristors logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
BT258B series
QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258BRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A
PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION cathode anode gate anode
PIN CONFIGURATION
mb
SYMBOL
a
2 1 3
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. September 1997 1 Rev 1.100
Philips Semiconductors
Product specification
Thyristors logic level
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board -
BT258B series
TYP. 55
MAX. 2.0 -
UNIT K/W K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 16 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.1 TYP. 50 0.4 0.3 1.3 0.4 0.2 0.1 MAX. 200 10 6 1.5 1.5 0.5 UNIT µA mA mA V V V mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ MIN. 50 TYP. 100 2 100 MAX. UNIT V/µs µs µs
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Thyristors logic level
BT258B series
8 7 6 5 4 3 2 1 0
Ptot / W
conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57
BT150
Tmb(max) / C a = 1.57 1.9
109 111 113 115 117 119 121 123
80 70 60 50 40 30 20 10 0
ITSM / A
BT258 IT I TSM
2.2 2.8 4
time T Tj initial = 25 C max
0
1
2
3 IT(AV) / A
4
5
125 6
1
10 100 Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
BT150
Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
1000
ITSM / A
24 20 16 12
IT(RMS) / A
BT150
dI T/dt limit 100 I TSM T time
IT
8 4 0 0.01
Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A BT258 111 C
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 111˚C.
VGT(Tj) VGT(25 C)
9 8 7 6 5 4 3 2 1
1.6 1.4 1.2 1 0.8 0.6
BT151
0 -50
0
50 Tmb / C
100
150
0.4 -50
0
50 Tj / C
100
150
Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Thyristors logic level
BT258B series
3 2.5 2 1.5 1 0.5
IGT(Tj) IGT(25 C)
BT150
30 25
IT / A Tj = 125 C Tj = 25 C
Vo = 0.99 V Rs = 0.0325 ohms
BT150+
2.