Thyristor
Philips Semiconductors
Product specification
Thyristor logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gat...
Description
Philips Semiconductors
Product specification
Thyristor logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
BT169W Series
QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT169 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. MAX. UNIT BW 200 0.5 0.8 8 DW 400 0.5 0.8 8 EW 500 0.5 0.8 8 GW 600 0.5 0.8 8 V A A A
PINNING - SOT223
PIN 1 2 3 tab DESCRIPTION cathode anode gate anode
PIN CONFIGURATION
4
SYMBOL
a
k
1
2
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tsp ≤ 112 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 B 2001 MAX. D 4001 E 5001 G 6001 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after tri...
Similar Datasheet