BT169

Philips Semiconductors Product specification Thyristor logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT169W Series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT169 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. MAX. UNIT BW 200 0.5 0.8 8 DW 400 0.5 0.8 8 EW 500 0.5 0.8 8 GW 600 0.5 0.8 8 V A A A PINNING - SOT223 PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION 4 SYMBOL a k 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tsp ≤ 112 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 B 2001 MAX. D 4001 E 5001 G 6001 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current 0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125 I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after tri...