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BT152-800R

NXP

SCR

TO-220AB BT152-800R SCR Rev. 2 — 9 June 2011 Product data sheet 1. Product profile 1.1 General description Planar pa...


NXP

BT152-800R

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Description
TO-220AB BT152-800R SCR Rev. 2 — 9 June 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 1.2 Features and benefits  High thermal cycling performance  High voltage capability  Planar passivated for voltage ruggedness and reliability  Very high current surge capability 1.3 Applications  Ignition circuits  Motor control  Protection circuits e.g. SMPS inrush current  Voltage regulation 1.4 Quick reference data Table 1. Symbol VDRM VRRM ITSM Quick reference data Parameter repetitive peak off-state voltage repetitive peak reverse voltage non-repetitive peak on-state current IT(AV) average on-state current IT(RMS) RMS on-state current Static characteristics IGT gate trigger current Conditions half sine wave; Tj(init) = 25 °C; tp = 10 ms; see Figure 4; see Figure 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms half sine wave; Tmb ≤ 103 °C; see Figure 3 half sine wave; see Figure 1; see Figure 2 VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 7 Min Typ Max Unit - - 800 V - - 800 V - - 200 A - - 220 A - - 13 A - - 20 A - 3 32 mA NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description K cathode A anode G gate A mounting base; connected to anode Simplified outline mb BT152-800R SCR Graphic symbol...




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