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BT137X-500G Dataheets PDF



Part Number BT137X-500G
Manufacturers NXP
Logo NXP
Description Triacs
Datasheet BT137X-500G DatasheetBT137X-500G Datasheet (PDF)

Philips Semiconductors Product specification Triacs BT137X series GENERAL DESCRIPTION Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT137XBT137XBT137XRepetitive peak off-state voltages RMS on-stat.

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Philips Semiconductors Product specification Triacs BT137X series GENERAL DESCRIPTION Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT137XBT137XBT137XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 8 65 600 600F 600G 600 8 65 800 800F 800G 800 8 65 VDRM IT(RMS) ITSM V A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths ≤ 73 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs BT137X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.5 6.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT137XVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.3 0.7 0.4 0.1 35 35 35 70 30 45 30 45 20 MAX. ...F 25 25 25 70 30 45 30 45 20 1.65 1.5 0.5 ...G 50 50 50 100 45 60 45 60 40 mA mA mA mA mA mA mA mA mA V V V mA UNIT IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current September 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs BT137X series DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT137XVDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 8 A; dIcom/dt = 3.6 A/ms; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/µs dVcom/dt - - 10 20 - V/µs tgt - - - 2 - µs September 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs BT137X series 12 10 Ptot / W BT137 Ths(max) / C 71 = 180 120 80 89 10 IT(RMS) / A BT137X 1 90 60 30 8 73 C 8 6 4 2 0 6 98 4 107 116 125 10 2 0 2 4 6 IT(RMS) / A 8 0 -50 0 50 Ths / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. BT137 BT137 Fig.4. Maximum permissible rms current IT(RMS), versus heatsink temperature Ths. BT137 1000 ITSM / A IT I TSM time 25 IT(RMS) / A 20 Tj initial = 25 C max 15 100 dI T /dt limit 10 T2- G+ quadrant 5 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 73˚C. VGT(Tj) VGT(25 C) 80 70 60 50 40 30 ITSM / A BT137 IT T ITSM time 1.6 1.4 1.2 1 0.8 BT136 Tj initial = 25 C max 20 10 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum .


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