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BT137X-500D Dataheets PDF



Part Number BT137X-500D
Manufacturers NXP
Logo NXP
Description Triacs logic level
Datasheet BT137X-500D DatasheetBT137X-500D Datasheet (PDF)

Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a full pack plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT137X series D QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137XRepetitive peak off-state .

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Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a full pack plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT137X series D QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 500D 500 8 65 600D 600 8 65 V A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths ≤ 73 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs logic level ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. - BT137X series D TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.5 6.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 3.5 3.5 6.5 1.6 8.5 1.2 2.5 1.5 1.3 0.7 0.4 0.1 MAX. 5 5 5 10 15 20 15 20 10 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 5 2 MAX. UNIT V/µs µs September 1997 2 Rev 1.200 Philips Semiconductors Product specification Triacs logic level BT137X series D 12 10 Ptot / W BT137 Ths(max) / C 71 = 180 120 80 89 10 IT(RMS) / A BT137X 1 90 60 30 8 73 C 8 6 4 2 0 6 98 4 107 116 125 10 2 0 2 4 6 IT(RMS) / A 8 0 -50 0 50 Ths / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. BT137 BT137 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. BT137 1000 ITSM / A IT I TSM time 25 IT(RMS) / A 20 Tj initial = 25 C max 15 100 dI T /dt limit 10 T2- G+ quadrant 5 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 73˚C. VGT(Tj) VGT(25 C) 80 70 60 50 40 30 ITSM / A BT137 IT T ITSM time 1.6 1.4 1.2 1 0.8 BT136 Tj initial = 25 C max 20 10 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. September 1997 3 Rev 1.200 Philips Semiconductors Product specification Triacs logic level BT137X series D 3 2.5 2 1.5 IGT(Tj) IGT(25 C) BT137D T2+ G+ T2+ GT2- GT2- G+ 25 IT / A.


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