Document
Philips Semiconductors
Product specification
Triacs logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs in a full pack plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
BT137X series D
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 500D 500 8 65 600D 600 8 65 V A A
PINNING - SOT186A
PIN 1 2 3 DESCRIPTION main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2 gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths ≤ 73 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over any 20 ms period
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. September 1997 1 Rev 1.200
Philips Semiconductors
Product specification
Triacs logic level
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. -
BT137X series D
TYP.
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.5 6.5 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 3.5 3.5 6.5 1.6 8.5 1.2 2.5 1.5 1.3 0.7 0.4 0.1 MAX. 5 5 5 10 15 20 15 20 10 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 5 2 MAX. UNIT V/µs µs
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs logic level
BT137X series D
12 10
Ptot / W
BT137
Ths(max) / C 71 = 180 120 80 89
10
IT(RMS) / A
BT137X
1
90 60 30
8
73 C
8 6 4 2 0
6
98
4
107 116 125 10
2
0
2
4 6 IT(RMS) / A
8
0 -50
0
50 Ths / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
BT137 BT137
Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.
BT137
1000
ITSM / A
IT
I TSM time
25
IT(RMS) / A
20
Tj initial = 25 C max
15
100 dI T /dt limit
10
T2- G+ quadrant
5
10 10us
100us
1ms T/s
10ms
100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 73˚C.
VGT(Tj) VGT(25 C)
80 70 60 50 40 30
ITSM / A
BT137 IT T ITSM time
1.6 1.4 1.2 1 0.8
BT136
Tj initial = 25 C max
20 10
0.6 0.4 -50
0
1
10 100 Number of cycles at 50Hz
1000
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs logic level
BT137X series D
3 2.5 2 1.5
IGT(Tj) IGT(25 C)
BT137D T2+ G+ T2+ GT2- GT2- G+
25
IT / A.