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UNISONIC TECHNOLOGIES CO., LTD
1N60P
1.2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
1N60PL-T92-B
1N60PG-T92-B
TO-92
1N60PL-T92-K
1N60PG-T92-K
TO-92
1N60PL-T92-R
1N60PG-T92-R
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS
Packing
Ta.