1N60P

1N60, 1N60P Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · Small temperature coefficient of forward characteristics · Satisfactory Wave detection efficiency · For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier Mechanical Data · Case : DO-35 glass case · Polarity : Color band denotes cathode end · Weight : Approx. 0.13 gram Absolute Ratings (Limiting Values) Symbols VRRM lF lFSM TSTG/TJ TL Parameters Zenerepetitive Peak Reverse Voltage Forward Continuous Crrent TA=25 Peak Forward Surge Current(t=1S) Storage junction Temperature Range Maximum Lead Temperature for soldering 10S at 4mm from Case GERMANIUM DIODES DO-35(GLASS) 0.075(1.9) MAX. DIA. 1.083(27.5) MIN. 0.154(3.9) MAX. 0.020(0.52) MAX. DIA. 1.083(27.5) MIN. Dimensions in inches and (millimeters) ...