BSX20

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor FEATURES Low current (max. 200 mA) Low voltage (max. 15 V). APPLICATIONS High-speed saturated switching (and HF amplifier applications). DESCRIPTION NPN switching transistor in a TO-18 metal package. 3 MAM264 BSX20 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION handbook, halfpage 1 3 2 1 2 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 10 mA; VCE = 1 V IC = 100 mA; VCE = 2 V IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA open emitter open base CONDITIONS − − − − 40 20 500 − MIN. MAX. 40 15 200 360 120 − − 30 MHz ns V V mA mW UNIT 1997 May 14 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature ...