BSW67A

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 1 A) High voltage (max. 150 V). APPLICATIONS General purpose switching and amplification Industrial applications. BSW66A; BSW67A; BSW68A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 3 2 DESCRIPTION NPN transistor in a TO-39 metal package. 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSW66A BSW67A BSW68A VCEO collector-emitter voltage BSW66A BSW67A BSW68A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tcase ≤ 25 °C IC = 10 mA; VCE = 5 V IC = 500 mA; VCE = 5 V IC = 100 mA; VCE = 20 V; f = 100 MHz ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA open base − − − − − 30 30 − − − − − − − − − 130 900 100 120 150 1 5 − − − − MHz ns V V V A W open emitter − − − − − − 100 120 150 V V V CONDITIONS MIN. TYP. MAX. UNIT 1997 May 05 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSW66A BSW67A BSW68A VCEO collector-emitter voltage BSW66A BSW67A BSW68A VEBO IC ICM IBM Pt...