BST15

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST15; BST16 PNP high-voltage transistors Product specification Supersedes data of 1998 Aug 03 1999 Apr 26 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES Low current (max. 200 mA) High voltage (max. 300 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BST39 and BST40. MARKING TYPE NUMBER BST15 BST16 MARKING CODE BT1 BT2 1 Bottom view 2 3 handbook, halfpage BST15; BST16 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST15 BST16 VCEO collector-emitter voltage BST15 BST16 VEBO emitter-base voltage BST15 BST16 IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector − − − − − − −65 − −65 −4 −6 −200 −400 −200 1.3 +150 150 +150 V V mA mA mA W °C °C °C open base − − −200 −300 V V PARAMETER collector-base voltage CONDITIONS open emitter ...