Document
BSS 89
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G Type BSS 89 Type BSS 89 BSS 89 BSS 89 Pin 2 D Marking SS89 Pin 3 S
VDS
240 V
ID
0.3 A
RDS(on)
6Ω
Package TO-92
Ordering Code Q62702-S519 Q62702-S619 Q62702-S385
Tape and Reel Information E6288 E6296 E6325
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.3
TA = 25 °C
DC drain current, pulsed
IDpuls
1.2
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 89
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
240 1.5 0.1 10 10 4.5 5.3 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100 0.2
µA
VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
100
nA Ω 6 10
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A
Semiconductor Group
2
12/05/1997
BSS 89
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.14 0.33 115 15 8 -
S pF 155 25 12 ns 5 8
VDS≥ 2 * ID * RDS(on)max, ID = 0.3 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω
Rise time
tr
10 15
VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω
Turn-off delay time
td(off)
30 40
VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω
Fall time
tf
20 27
VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω
Semiconductor Group
3
12/05/1997
BSS 89
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max.
Unit
A 0.9 0.3 1.2 V 1.4
TA = 25 °C
Inverse diode direct current,pulsed
ISM
-
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 0.6 A
Semiconductor Group
4
12/05/1997
BSS 89
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V
0.32
1.2 W
A 1.0
Ptot
0.9 0.8
ID
0.24
0.20 0.7 0.6 0.5 0.12 0.4 0.3 0.2 0.04 0.1 0.0 0 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 °C 160 0.08 0.16
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
285 V 275
V(BR)DSS 270
265 260 255 250 245 240 235 230 225 220 215 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
12/05/1997
BSS 89
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
0.70 A 0.60
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
19
Ptot = 1W
lkj i h g f
VGS [V] a 2.0
b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
Ω
16
a
b
c
ID
0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0
a c e
RDS (on)
14 12 10 8 6 4
d e f g ih j
c d e f g
d
h i j k l
b
2
VGS [V] =
a 2.0 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 6.0 g 7.0 h i j 8.0 9.0 10.0
2
4
6
8
V
11
0 0.00
0.10
0.20
0.30
0.40
A
0.60
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max
1.2
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
0.55 S
A
ID
0.8
gfs
0.45 0.40 0.35 0.30
0.6 0.25 0.20 0.15 0.2 0.10 0.05 0.0 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.10 0.20 0.30 0.40 A ID 0.55
0.4
VGS
Semiconductor Group
6
12/05/1997
BSS 89
Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.3 A, VGS = 10 V
15
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
13
RDS (on) 12
11 10 9 8 7 6 5 4 3 2 1 0 -60
VGS(th)
3.6 3.2 2.8
98% typ
2.4
98%
2.0 1.6 1.2
typ
2%
0.8 0.4 -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs
10 1
pF C 10 2
A
IF Ciss
10 0
10 1
Coss Crss
10 -1
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 0 0
5
10
15
20
25
30
V VDS
40
10 -2 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
12/05/1997
.