BSP52
BSP52
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current gain a...
BSP52
BSP52
NPN Darlington
Transistor
This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03.
2 1 4
3
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCES VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 80 90 5 800 - 55 ~ +150 Units V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Off Characteristics V(BR)CBO V(BR)EBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter Test Conditions IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 80V, VBE = 0 VEB = 4.0V, IC = 0 IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA 1000 2000 1.3 1.9 V V Min. 90 5 10 10 Typ. Max. Units V V µA µA Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
On Characteristics
Thermal Characteristics TA=25°C unless oth...