BSP42

BSP40/41 BSP42/43 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE BSP30, BSP31, BSP32 AND BSP33 RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CES V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (V BE = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 70 60 70 5 1 0.1 2 -65 to 150 150 Value BSP40/BSP41 BSP42/BSP43 90 80 90 V V V V A A W o o Unit C C 1/4 October 1995 BSP40/41/42/43 THERMAL DATA R thj-amb R thj-tab Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 60 V V CB = 60 V T j = 150 C 70 90 60 80 70 90 5 o Min. Typ. Max. 100 50 Unit nA µA V V V V V V V I C = 100 µ A for BSP40/BSP41 for BSP42/BSP43 I C = 10 mA for BSP40/BSP41 for BSP42/BSP43 I C = 10 µ A f...