M29DW323DT

M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ ACCESS TIME: 70ns „ PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program „ MEMORY BLOCKS – Dual Bank Memory Array: 8Mbit+24Mbit – Parameter Blocks (Top or Bottom Location) „ DUAL OPERATIONS – Read in one bank while Program or Erase in other „ ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend „ UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming „ VPP/WP PIN for FAST PROGRAM and WRITE PROTECT „ TEMPORARY BLOCK UNPROTECTION MODE „ COMMON FLASH INTERFACE – 64 bit Security Code „ EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information „ LOW POWER CONSUMPTION – Standby and Automatic Standby „ 100,000 PROGRAM/ERASE...