BSP 300
SIPMOS ® Small-Signal Transistor
• N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V
Pin...
BSP 300
SIPMOS ® Small-Signal
Transistor
N channel Enhancement mode Avalanche rated VGS(th)= 2.0... 4.0 V
Pin 1 G
Pin 2 D
Pin 3 S
Pin 4 D
Type
VDS 800 V
ID 0.19 A
RDS(on) 20 Ω
Package
Marking
BSP 300
Type BSP 300 BSP 300
SOT-223
BSP 300
Ordering Code Q67050 -T0009 Q67050-T0017
Tape and Reel Information E6433 E6327
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TA = 25 °C
ID
A 0.19
DC drain current, pulsed
TA = 25 °C
IDpuls
0.76
E AS
Avalanche energy, single pulse
ID = 0.8 A, VDD = 50 V, RGS = 25 Ω L = 105 mH, Tj = 25 °C
mJ
36
V GS P tot
Gate source voltage Power dissipation
TA = 25 °C
± 20
1.8
V W
Semiconductor Group
1
02/12/1996
BSP 300
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA RthJS
-55 ... + 150 -55 ... + 150
°C
≤ 70 ≤ 14
E 55 / 150 / 56
K/W
1)
Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 800 -
Gate threshold voltage
V GS=V DS, ID = 1 mA
V GS(th)
2
IDSS
3
4 µA
Zero gate voltage drain current
V DS = 800 V, V GS...