BSP 295
SIPMOS ® Small-Signal Transistor
• N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G
T...
BSP 295
SIPMOS ® Small-Signal
Transistor
N channel Enhancement mode Logic Level
VGS(th) = 0.8...2.0V
Pin 1 G
Type
Pin 2 D
Marking
Pin 3 S
Pin 4 D
VDS
50 V
ID
1.8 A
RDS(on)
0.3 Ω
Package
BSP 295
Type BSP 295
SOT-223
BSP 295
Ordering Code Q67000-S066
Tape and Reel Information E6327
Maximum Ratings Parameter Symbol Values Unit
Drain source voltage Drain-gate voltage
RGS = 20 kΩ
VDS V
DGR
50
V
50
VGS
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current
TA = 34 ˚C
± 20
Class 1 A 1.8
ID
DC drain current, pulsed
TA = 25 ˚C
IDpuls
7.2
Ptot
Power dissipation
TA = 25 ˚C
W 1.8
Data Sheet
1
05.99
BSP 295
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1)
Tj Tstg RthJA R thJS
-55 ... + 150 -55 ... + 150
˚C
≤ 70 ≤ 10
E 55 / 150 / 56
K/W
1)
Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
V (BR)DSS
V 50 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
0.8
IDSS
1.4
2
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj =...