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BSP295

Infineon Technologies AG

SIPMOS Small-Signal Transistor

BSP 295 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G T...


Infineon Technologies AG

BSP295

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Description
BSP 295 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 G Type Pin 2 D Marking Pin 3 S Pin 4 D VDS 50 V ID 1.8 A RDS(on) 0.3 Ω Package BSP 295 Type BSP 295 SOT-223 BSP 295 Ordering Code Q67000-S066 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Drain-gate voltage RGS = 20 kΩ VDS V DGR 50 V 50 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current TA = 34 ˚C ± 20 Class 1 A 1.8 ID DC drain current, pulsed TA = 25 ˚C IDpuls 7.2 Ptot Power dissipation TA = 25 ˚C W 1.8 Data Sheet 1 05.99 BSP 295 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Tj Tstg RthJA R thJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 50 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 0.8 IDSS 1.4 2 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj =...




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