BSP254A

DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. PINNING - TO-92 variant BSP254 PIN 1 2 3 gate drain source handbook, halfpage BSP254; BSP254A QUICK REFERENCE DATA SYMBOL VDS VGSO  Yfs ID RDS(on) Ptot PARAMETER drain-source voltage gate-source voltage forward transfer admittance drain current (DC) drain-source VGS = −10 V; on-state resistance ID = −200 mA total power dissipation Tamb = 25 °C open drain ID = −200 mA; VDS = −25V CONDITIONS MIN. TYP. MAX. UNIT − − 100 − − − − − 200 − 10 − −250 ±20 − −0.2 15 1 V V mS A Ω W DESCRIPTION d 1 2 3 g PINNING - TO-92 variant BSP254A MAM147 s PIN 1 2 3 gate drain DESCRIPTION source Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL −VDS V GSO BSP254; BSP254A PARAMETER drain-source voltage gate-source voltage drain current drain current total power dis...