BSP250

DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES High-speed switching No secondary breakdown Very low on-resistance. APPLICATIONS Low-loss motor and actuator drivers Power switching. DESCRIPTION handbook, halfpage BSP250 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 Top view 2 3 MAM121 s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VSD VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −1 A; VGS = −10 V Ts = 100 °C IS = −1.25 A open drain ID = −1 mA; VDS = VGS CONDITIONS − − − −1 − − − MIN. MAX. −30 −1.6 ±20 −2.8 −3 0.25 5 V V V V A Ω W UNIT 1997 Jun 20 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating Syste...