DISCRETE SEMICONDUCTORS
DATA SHEET
BSP225 P-channel enhancement mode vertical D-MOS transistor
Product specification Fi...
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP225 P-channel enhancement mode vertical D-MOS
transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS
transistor
FEATURES Low RDS(on) Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS
transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain
1 Top view 2 3
MAM121
BSP225
QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value −ID = 200 mA −VGS = 10 V −ID = 1 mA VGS = VDS CONDITIONS MAX. 250 225 15 2.8 UNIT V mA Ω V
PIN CONFIGURATION
handbook, halfpage
4
d
DESCRIPTION
g
s
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS
transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL −VDS ±VGSO −ID −IDM Ptot Tstg Tj Note PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range junction temperature open drain DC value peak value up to Tamb = 25 °C (note 1) CONDITIONS MIN. − − − − − −65 −
BSP225
MAX. 250 20 225 600 1.5 150 ...