BSP20AT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSP19AT1/D NPN Silicon Epitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High Voltage: V(BR)CEO of 250 and 350 Volts. The SOT-223 package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel T1 Configuration – 7 inch/1000 unit reel T3 Configuration – 13 inch/4000 unit reel PNP Complement is BSP16T1 COLLECTOR 2,4 BSP19AT1 BSP20AT1 Motorola Preferred Devices SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 BASE 1 EMITTER 3 1 2 3 CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ BSP19A 350 400 5.0 1000 0.8 6.4 – 65 to 150 150 BSP20A 250 300 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C DEVICE MARKING SP19A SP20A THERMA...