MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSP19AT1/D
NPN Silicon Epitaxial Transistor
This family ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSP19AT1/D
NPN Silicon Epitaxial
Transistor
This family of
NPN Silicon Epitaxial
transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High Voltage: V(BR)CEO of 250 and 350 Volts. The SOT-223 package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel T1 Configuration – 7 inch/1000 unit reel T3 Configuration – 13 inch/4000 unit reel
PNP Complement is BSP16T1
COLLECTOR 2,4
BSP19AT1 BSP20AT1
Motorola Preferred Devices
SOT–223 PACKAGE
NPN SILICON HIGH VOLTAGE
TRANSISTOR SURFACE MOUNT
4
BASE 1 EMITTER 3
1
2 3
CASE 318E-04, STYLE 1 TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ BSP19A 350 400 5.0 1000 0.8 6.4 – 65 to 150 150 BSP20A 250 300 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C
DEVICE MARKING
SP19A SP20A
THERMA...