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BSP19 Dataheets PDF



Part Number BSP19
Manufacturers NXP
Logo NXP
Description NPN high-voltage transistors
Datasheet BSP19 DatasheetBSP19 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors Product specification Supersedes data of 1997 Mar 03 1999 Jun 01 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Switching and amplification • Especially used in telephony and automotive applications. DESCRIPTION handbook, halfpage BSP19; BSP20 PINNING PIN 1 2, 4 3 base collector emitter.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors Product specification Supersedes data of 1997 Mar 03 1999 Jun 01 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Switching and amplification • Especially used in telephony and automotive applications. DESCRIPTION handbook, halfpage BSP19; BSP20 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 NPN transistor in a SOT223 plastic package. PNP complement: BSP16. 1 Top view 2 3 MAM287 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP19 BSP20 VCEO collector-emitter voltage BSP19 BSP20 VEBO IC IB Ptot Tstg Tj Tamb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − −65 − −65 350 250 5 100 100 1.2 +150 150 +150 V V V mA mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 400 300 V V MIN. MAX. UNIT 1999 Jun 01 2 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 BSP19; BSP20 VALUE 104 23 UNIT K/W K/W 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cc fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCE = 300 V IC = 0; VEB = 5 V VCE = 10 V; IC = 20 mA IC = 50 mA; IB = 4 mA IE = ie = 0; VCB = 10 V; f = 1 MHz VCE = 10 V; IC = 10 mA; f = 100 MHz − − 40 − − 70 MIN. MAX. 20 100 − 0.5 2.5 − V pF MHz UNIT nA nA 1999 Jun 01 3 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads BSP19; BSP20 SOT223 D B E A X c y HE b1 v M A 4 Q A A1 1 e1 e 2 bp 3 w M B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 1999 Jun 01 4 Philips Semiconductors Product specification NPN high-voltage transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BSP19; BSP20 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jun 01 5 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BSP19; BSP20 1999 Jun 01 6 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BSP19; BSP20 1999 Jun 01 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Busi.


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