Document
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BSP19; BSP20 NPN high-voltage transistors
Product specification Supersedes data of 1997 Mar 03 1999 Jun 01
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Switching and amplification • Especially used in telephony and automotive applications. DESCRIPTION
handbook, halfpage
BSP19; BSP20
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
4
2, 4 1
NPN transistor in a SOT223 plastic package. PNP complement: BSP16.
1 Top view 2 3
MAM287
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP19 BSP20 VCEO collector-emitter voltage BSP19 BSP20 VEBO IC IB Ptot Tstg Tj Tamb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − −65 − −65 350 250 5 100 100 1.2 +150 150 +150 V V V mA mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 400 300 V V MIN. MAX. UNIT
1999 Jun 01
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1
BSP19; BSP20
VALUE 104 23
UNIT K/W K/W
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cc fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCE = 300 V IC = 0; VEB = 5 V VCE = 10 V; IC = 20 mA IC = 50 mA; IB = 4 mA IE = ie = 0; VCB = 10 V; f = 1 MHz VCE = 10 V; IC = 10 mA; f = 100 MHz − − 40 − − 70 MIN. MAX. 20 100 − 0.5 2.5 − V pF MHz UNIT nA nA
1999 Jun 01
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BSP19; BSP20
SOT223
D
B
E
A
X
c y HE b1 v M A
4
Q A A1
1
e1 e
2
bp
3
w M B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
1999 Jun 01
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BSP19; BSP20
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 01
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BSP19; BSP20
1999 Jun 01
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BSP19; BSP20
1999 Jun 01
7
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