BSP170P

Final data BSP 170 P SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Avalanche rated dv/dt rated Product Summary VDS R DS(on) ID -60 0.3 -1.9 SOT-223 4 V Ω A 3 2 1 VPS05163 Drain pin 2 Type BSP 170 P Package SOT-223 Ordering Code Q67041-S4018 Gate pin1 Source pin 3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol ID Value Unit Continuous drain current TA=25°C TA=70°C A -1.9 -1.5 Pulsed drain current TA=25°C ID puls EAS EAR -7.6 70 0.18 -6 ±20 1.8 -55... +150 55/150/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =-1.9 A , VDD =-25V, RGS =25Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =-1.9A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C dv/dt VGS Ptot Tj , Tstg Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-16 Final data BSP 170 P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJS RthJA - Values typ. max. 20 Unit K/W - 110 70 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) -60 -2.1 Values typ. -3 max. -4 Unit V Gate threshold voltage, VGS = VDS ID =-250µA Zero gate voltage drain current VDS =-...